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1

Doping of epitaxial silicon: Equilibrium gas phase and doping mechanism

P. Rai-Choudhury, E.I. Salkovitz

Journal:

Journal of Crystal Growth

Year:

1970

Language:

english

File:

PDF, 723 KB

english, 1970

2

Doping of epitaxial silicon: Effect of dopant partial pressure

P. Rai-Choudhury, E.I. Salkovitz

Journal:

Journal of Crystal Growth

Year:

1970

Language:

english

File:

PDF, 897 KB

english, 1970

3

Electron irradiation induced recombination centers in silicon-minority carrier lifetime control

Rai-Choudhury, P., Bartko, J., Johnson, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1976

Language:

english

File:

PDF, 580 KB

english, 1976

4

Microinhomogeneities in melt and vapor grown silicon

P. Rai-Choudhury

Journal:

Journal of Crystal Growth

Year:

1971

Language:

english

File:

PDF, 1.76 MB

english, 1971

5

Gallium doped epitaxial silicon

P. Rai-Choudhury

Journal:

Journal of Crystal Growth

Year:

1971

Language:

english

File:

PDF, 1.64 MB

english, 1971

6

Thermodynamics of Ga-AsCl3-H2 system and dopant incorporation

P. Rai-Choudhury

Journal:

Journal of Crystal Growth

Year:

1971

Language:

english

File:

PDF, 685 KB

english, 1971

7

Crystal growth considerations in the use of “solar grade” silicon

R.H. Hopkins, R.G. Seidensticker, J.R. Davis, P. Rai-Choudhury, P.D. Blais, J.R. McCormick

Journal:

Journal of Crystal Growth

Year:

1977

Language:

english

File:

PDF, 479 KB

english, 1977

8

Doping of epitaxial silicon-behavior of solid solutions

P. Rai-Choudhury

Journal:

Journal of Physics and Chemistry of Solids

Year:

1969

Language:

english

File:

PDF, 925 KB

english, 1969

9

Doping of epitaxial silicon—Behavior of solid solutions

P. Rai-Choudhury

Journal:

Solid State Communications

Year:

1969

Language:

english

File:

PDF, 264 KB

english, 1969

10

Optimization of the spreading resistance profiling technique for submicron structures

H.L. Berkowitz, D.M. Burnell, R.J. Hillard, R.G. Mazur, P. Rai-Choudhury

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 560 KB

english, 1990

11

SOI material properties determined by electrical characterization

P. Rai-Choudhury, R.J. Hillard, J.M. Heddleson, S.R. Weinzierl, T. Abe, P. Karulkar, M. Pawlik

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 258 KB

english, 1992

12

A pressure contact current-voltage technique for rapid characterization of thin dielectric films

Pramod C. Karulkar, R.J. Hillard, J.M. Heddleson, P. Rai-Choudhury

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 383 KB

english, 1991

13

High-efficiency silicon solar cells: Development, current issues and future directions

A. Rohatgi, P. Rai-Choudhury

Journal:

Year:

1986

Language:

english

File:

PDF, 829 KB

english, 1986

14

Profiling of compound semiconductors using point contact techniques

R.J. Hillard, H.L. Berkowitz, J.M. Heddleson, R.G. Mazur, P. Rai-Choudhury

Journal:

Euro III-Vs Review

Year:

1990

Language:

english

File:

PDF, 255 KB

english, 1990

15

Profiling of compound semiconductors using point contact techniques: Part 2

R.J. Hillard, H.L. Berkowitz, J.M. Heddleson, R.G. Mazur, P. Rai-Choudhury

Journal:

Euro III-Vs Review

Year:

1990

Language:

english

File:

PDF, 330 KB

english, 1990

16

Effect of titanium, copper and iron on silicon solar cells

A. Rohatgi, J.R. Davis, R.H. Hopkins, P. Rai-Choudhury, P.G. McMullin, J.R. McCormick

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 599 KB

english, 1980

17

Design, fabrication, and analysis of 17-18-percent efficient surface-passivated silicon solar cells

Rohatgi, A., Rai-Choudhury, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 679 KB

english, 1984

18

Impurities in silicon solar cells

Davis, J.R., Jr., Rohatgi, A., Hopkins, R.H., Blais, P.D., Rai-Choudhury, P., McCormick, J.R., Mollenkopf, H.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 986 KB

english, 1980

19

Radiation-hard static induction transistor

Hanes, M.H., Bartko, J., Hwang, J.-M., Rai-Choudhury, P., Leslie, S.G.

Journal:

IEEE Transactions on Nuclear Science

Year:

1988

Language:

english

File:

PDF, 471 KB

english, 1988

20

An approach toward 20-percent-efficient silicon solar cells

Rohatgi, A., Rai-Choudhury, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 743 KB

english, 1986

21

Epitaxial Gallium Arsenide from Trimethyl Gallium and Arsine

Rai-Choudhury, P.

Journal:

Journal of The Electrochemical Society

Year:

1969

Language:

english

File:

PDF, 340 KB

english, 1969

22

Growth and Characterization of Polycrystalline Silicon

Rai-Choudhury, P., Hower, P. L.

Journal:

Journal of The Electrochemical Society

Year:

1973

Language:

english

File:

PDF, 1.16 MB

english, 1973

23

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

Rohatgi, A., Meier, D. L., Rai-Choudhury, P., Fonash, S. J., Singh, R.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 619 KB

english, 1986

24

Selective Growth of Epitaxial Silicon and Gallium Arsenide

Rai-Choudhury, P., Schroder, D. K.

Journal:

Journal of The Electrochemical Society

Year:

1971

Language:

english

File:

PDF, 915 KB

english, 1971

25

[IEEE 1991 IEEE International SOI Conference - Vail Valley, CO, USA (1-3 Oct. 1991)] 1991 IEEE International SOI Conference Proceedings - Effect of buried oxide charge on SOI spreading resistance profile

Karulkar, P.C., Hillard, R.J., Heddleson, J.M., Rai-Choudhury, P., Abe, T.

Year:

1991

Language:

english

File:

PDF, 135 KB

english, 1991

26

Lifetimes and Diode Characteristics in Epitaxial Silicon

Rai-Choudhury, P., Schroder, D. K.

Journal:

Journal of The Electrochemical Society

Year:

1972

Language:

english

File:

PDF, 688 KB

english, 1972

27

[IEEE 1990 IEEE SOS/SOI Technology Conference. - Key West, FL, USA (2-4 Oct. 1990)] 1990 IEEE SOS/SOI Technology Conference. Proceedings - Charge trapping in single and multiple implant SIMOX buried oxides

Hillard, R.J., Heddleson, J.M., Rai-Choudhury, P., Karulkar, P.C.

Year:

1990

Language:

english

File:

PDF, 138 KB

english, 1990

28

Silicon damage caused by CCl4 reactive ion etching: Its characterization and removal by rapid thermal annealing

S. J. Fonash, R. Singh, A. Rohatgi, P. Rai-choudhury, P. J. Caplan, E. H. Poindexter

Year:

1985

Language:

english

File:

PDF, 655 KB

english, 1985

29

Thermally Induced Dislocations in Silicon

Rai-Choudhury, P.

Journal:

Journal of Applied Physics

Year:

1969

Language:

english

File:

PDF, 546 KB

english, 1969

30

High-resistivity GaSb grown by molecular-beam epitaxy

Polyakov, A. Y., Stam, M., Milnes, A. G., Wilson, R. G., Fang, Z. Q., Rai-Choudhury, P., Hillard, R. J.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 786 KB

english, 1992

31

[IEEE Proceedings. SOS/SOI Technology Workshop - St. Simons Island, GA, USA (3-5 Oct. 1988)] Proceedings. SOS/SOI Technology Workshop - Improved SOS by rapid thermal annealing and solid phase epitaxial regrowth

Rai-Choudhury, P., Vasudev, P.K., Phillips, J.M.

Year:

1988

Language:

english

File:

PDF, 50 KB

english, 1988

32

[IEEE Proceedings. SOS/SOI Technology Workshop - St. Simons Island, GA, USA (3-5 Oct. 1988)] Proceedings. SOS/SOI Technology Workshop - A performance comparison of advanced SOI technologies

Adams, D., Austin, M., Rai-Choudhury, R., Hwang, J.

Year:

1988

Language:

english

File:

PDF, 64 KB

english, 1988

33

[IEEE IEEE SOS/SOI Technology Conference - Stateline, NV, USA (3-5 Oct. 1989)] IEEE SOS/SOI Technology Conference - Characterization of SIMOX and ZMR materials by spreading resistance and point contact current voltage techniques

Karulkar, P.C., Hillard, R.J., Rai-Choudhury, P.

Year:

1989

Language:

english

File:

PDF, 146 KB

english, 1989

34

β-Silicon Carbide Films

Rai-Choudhury, P., Formigoni, N. P.

Journal:

Journal of The Electrochemical Society

Year:

1969

Language:

english

File:

PDF, 678 KB

english, 1969

35

Carbon in Epitaxial Silicon

Rai-Choudhury, P., Noreika, A. J., Theodore, M. L.

Journal:

Journal of The Electrochemical Society

Year:

1969

Language:

english

File:

PDF, 814 KB

english, 1969

36

Substrate Surface Preparation and Its Effect on Epitaxial Silicon

Rai-Choudhury, P.

Journal:

Journal of The Electrochemical Society

Year:

1971

Language:

english

File:

PDF, 2.62 MB

english, 1971

37

Compatibility of Oxide Passivation and Planar Junctions with Al, Ga, and P Diffusions

Rai-Choudhury, P., Kao, Y. C., Sweeney, G. G.

Journal:

Journal of The Electrochemical Society

Year:

1974

Language:

english

File:

PDF, 3.01 MB

english, 1974

38

Hydrogen Passivation of Shallow and Deep Centers in GaSb

Polyakov, A.Y., Pearton, S.J., Wilson, R.G., Rai-Choudhury, P., Hillard, R.J., Bao, X.J., Stam, M., Milnes, A.G., Schlesinger, T.E.

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 372 KB

1992

39

Diffusion and Incorporation of Aluminum in Silicon

Rai-Choudhury, P.

Journal:

Journal of The Electrochemical Society

Year:

1977

Language:

english

File:

PDF, 954 KB

english, 1977

40

Formation of Silicon Whiskers by Aluminum-Quartz Interaction

Rai-Choudhury, P., Takei, W. J.

Journal:

Journal of The Electrochemical Society

Year:

1974

Language:

english

File:

PDF, 597 KB

english, 1974

41

Selective Silicon Epitaxy and Orientation Dependence of Growth

Rai-Choudhury, P., Schroder, D. K.

Journal:

Journal of The Electrochemical Society

Year:

1973

Language:

english

File:

PDF, 1.63 MB

english, 1973

42

Hydrogen Sulfide as an Etchant for Silicon

Rai-Choudhury, P., Noreika, A. J.

Journal:

Journal of The Electrochemical Society

Year:

1969

Language:

english

File:

PDF, 610 KB

english, 1969

43

Sulfur Hexafluoride as an Etchant for Silicon

Rai-Choudhury, P.

Journal:

Journal of The Electrochemical Society

Year:

1971

Language:

english

File:

PDF, 1.22 MB

english, 1971

44

Materials for low-cost solar cells

Shirland, F A, Rai-Choudhury, P

Journal:

Reports on Progress in Physics

Year:

1978

Language:

english

File:

PDF, 2.98 MB

english, 1978

45

Radiation-Induced Oxide Charge Distributions in Simox Buried Oxides

Hwang, J. M., Bartko, J., Rai-Choudhury, P., Bailey, W. E.

Journal:

MRS Proceedings

Year:

1987

Language:

english

File:

PDF, 388 KB

english, 1987

46

High Resistivity GaSb and GaAs Produced by MBE Growth at Elevated Temperatures

Polyakov, A. Y., Milnes, A. G., Stam, M., Wilson, R. G., Fang, Z. Q., Rai-Choudhury, P., Hillard, R. J.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 376 KB

english, 1992

47

The Effect of Hydrogen Treatment on Electrical Properties of AIGaAsSb

Polyakov, A. Y., Stam, M., Milnes, A. G., Wilson, R. G., Bochkarev, A. E., Rai-Choudhury, P., Hillard, R. J., Pearton, S. J.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 338 KB

english, 1992

48

ChemInform Abstract: COMPATIBILITY OF OXIDE PASSIVATION AND PLANAR JUNCTIONS WITH AL, GA, AND P DIFFUSIONS

RAI-CHOUDHURY, P., KAO, Y. C., SWEENEY, G. G.

Journal:

Chemischer Informationsdienst

Year:

1975

File:

PDF, 119 KB

1975

49

ChemInform Abstract: FORMATION OF SILICON WHISKERS BY ALUMINUM-QUARTZ INTERACTION

RAI-CHOUDHURY, P., TAKEI, W. J.

Journal:

Chemischer Informationsdienst

Year:

1974

File:

PDF, 106 KB

1974

50

ChemInform Abstract: LEBENSDAUER UND DIODENCHARAKTERISTIKEN IN EPITAKTISCHEM SILICIUM

RAI-CHOUDHURY, P., SCHRODER, D. K.

Journal:

Chemischer Informationsdienst

Year:

1973

File:

PDF, 138 KB

1973

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